HIGH-POWER HIGH-EFFICIENCY GAALAS SUPERLUMINESCENT DIODES WITH AN INTERNAL ABSORBER FOR LASING SUPPRESSION

被引：34

作者：

KWONG, NSK

LAU, KY

BARCHAIM, N

机构：

[1] Ortel Corp, Alhambra, CA, USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 04期

关键词：

Buried Heterostructure - Internal Absorber - Lasing Suppression - Superluminescent Diodes;

D O I：

10.1109/3.17333

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：696 / 704

页数：9

共 15 条

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[10] MEASUREMENT OF THE MODAL REFLECTIVITY OF AN ANTI-REFLECTION COATING ON A SUPERLUMINESCENT DIODE [J].

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