OPTICAL-PROPERTIES OF A GAALAS SUPERLUMINESCENT DIODE

被引：20

作者：

DUTTA, NK

DEIMEL, PP

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1983年 / 19卷 / 04期

关键词：

D O I：

10.1109/JQE.1983.1071888

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：496 / 498

页数：3

共 13 条

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[7] GEOMETRICAL PROPERTIES OF RANDOM PARTICLES AND EXTRACTION OF PHOTONS FROM ELECTROLUMINESCENT DIODES [J].

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[8] LATERAL CONFINEMENT INGAASP SUPERLUMINESCENT DIODE AT 1.3 MU-M [J].

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