PHOTORESPONSE OF UNDOPED AND IODINE-DOPED IRON-OXIDE THIN-FILM ELECTRODES

被引:22
作者
KHAN, SUM
ZHOU, ZY
机构
[1] Department of Chemistry, Duquesne University, Pittsburgh
来源
JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1993年 / 357卷 / 1-2期
关键词
D O I
10.1016/0022-0728(93)80394-W
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Undoped and iodine doped iron oxide thin films were prepared spray pyrolytically and their photoresponse towards the water splitting reaction in alkaline medium (pH 13) was studied. The optimum spray time and the corresponding film thickness for maximum photoresponse were determined. An undoped iron oxide film approximately 50 nm thick gave rise to a maximum photocurrent density and its wavelength-dependent absorption coefficients of light were also measured. Raman spectroscopic analysis indicates the formation of alpha-Fe2O3 film by the spray pyrolytic method. The band gap of this undoped film was found to be 1.97 eV. A theoretical expression of photocurrent density at the thin film electrode-solution interface was developed. A good correlation was found between theoretical and experimental photocurrent densities. Importantly, such an iodine-doped iron oxide film approximately 100 nm thick gave rise to a fivefold increase in maximum photocurrent density compared with an undoped optimum thick film of approximately 50 nm. These observations were attributed to increased mobility of carriers and an increase in the absorption of light in the iodine-doped film. Model calculations show that five undoped iron oxide thin film electrodes of optimum thickness in stacks generate a photocurrent density of 5 mA cm-2 whereas an optimized stack of iodine-doped film produced a photocurrent density of 15 mA cm-2 at 0.82 V vs. SHE.
引用
收藏
页码:407 / 420
页数:14
相关论文
共 30 条
[11]   THIN-FILM PHOTOELECTROCHEMISTRY - IRON-OXIDE [J].
ITOH, K ;
BOCKRIS, JO .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) :1266-1271
[12]   STACKED THIN-FILM PHOTOELECTRODE USING IRON-OXIDE [J].
ITOH, K ;
BOCKRIS, JO .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (03) :874-876
[13]  
Johnson E. J., 1967, SEMICONDUCTORS SEMIM, V3
[14]  
KENNEDY JH, 1983, J ELECTROCHEM SOC, V130, P848, DOI 10.1149/1.2119833
[15]   PHOTOACTIVITY OF POLYCRYSTALLINE ALPHA-FE2O3 ELECTRODES DOPED WITH GROUP IVA ELEMENTS [J].
KENNEDY, JH ;
ANDERMAN, M ;
SHINAR, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (11) :2371-2373
[16]   ALPHA-FE2O3 PHOTOANODES DOPED WITH SILICON [J].
KENNEDY, JH ;
SHINAR, R ;
ZIEGLER, JP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (10) :2307-2309
[17]   A MODEL FOR ELECTRON-TRANSFER AT THE ILLUMINATED P-TYPE SEMICONDUCTOR SOLUTION INTERFACE [J].
KHAN, SUM ;
BOCKRIS, JO .
JOURNAL OF PHYSICAL CHEMISTRY, 1984, 88 (12) :2504-2515
[18]  
KHAN SUM, 1981, J APPL PHYS, V52, P270
[19]   PHOTOCATALYTIC PRODUCTION OF HYDROGEN FROM WATER BY A P-TYPE AND N-TYPE POLYCRYSTALLINE IRON-OXIDE ASSEMBLY [J].
LEYGRAF, C ;
HENDEWERK, M ;
SOMORJAL, GA .
JOURNAL OF PHYSICAL CHEMISTRY, 1982, 86 (23) :4484-4485
[20]   PHOTOELECTROLYSIS AT FE2O3/TIO2 HETEROJUNCTION ELECTRODE [J].
LIOU, FT ;
YANG, CY ;
LEVINE, SN .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) :342-345