INTERFACE PHONONS IN SPHERICAL GAAS/AL-X GA1-XAS QUANTUM DOTS

被引：47

作者：

DELACRUZ, RM

TEITSWORTH, SW

STROSCIO, MA

机构：

[1] DUKE UNIV,DEPT PHYS,DURHAM,NC 27708

[2] USA,RES OFF,RES TRIANGLE PK,NC 27709

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.52.1489

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Within the framework of the dielectric continuum model, the interface phonon frequencies for spherical GaAs/AlxGa1-xAs quantum dots are obtained as functions of the alloy composition in the range x=0.2-1.0. By imposing electrostatic boundary conditions, the two interface phonon frequencies are calculated for the first three modes. The frequency behavior of the different modes is found to be similar. However, for each mode one of the phonon frequencies is found to be strongly dependent on x. It is demonstrated that these phonon modes play an important role in determining resonant optical absorption of quantum dots.

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页码：1489 / 1492

页数：4

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