MECHANISM OF THE GROWTH OF MICROCRYSTALLINE SILICON

被引：14

作者：

JANG, J

KOH, SO

KIM, TG

KIM, SC

机构：

[1] Department of Physics, Kyung Hee University, Dongdaemoon-ku

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 23期

关键词：

D O I：

10.1063/1.106804

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the behavior of hydrogen atoms bonded to Si in hydrogenated amorphous silicon (a-Si:H) films prepared by layer by layer deposition technique, in which deposition of a few tens of a-Si:H film and hydrogen radical exposure on the surface are done alternatively, with variations of each layer thickness and the exposure time to hydrogen radicals. With increasing the exposure time, the hydrogen atoms are incorporated until reaching a saturation, and then out-diffused by forming molecular hydrogen. In this process, the microcrystalline structure is formed.

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页码：2874 / 2876

页数：3

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