EFFECTS OF HYDROGEN-ATOMS ON THE NETWORK STRUCTURE OF HYDROGENATED AMORPHOUS AND MICROCRYSTALLINE SILICON THIN-FILMS

被引：106

作者：

ASANO, A ^{[1
]}

机构：

[1] FUJI ELECT CORP RES & DEV LTD,YOKOSUKA 24001,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 06期

关键词：

D O I：

10.1063/1.102736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By alternating the deposition of a several-angstrom-thick hydrogenated amorphous silicon layer and the exposure to a hydrogen plasma, the structure of the resultant hydrogenated silicon films is varied from device-grade amorphous to microcrystalline without any change in the film precursors. On the basis of experimental results, the effects of hydrogen atoms reaching the film-growing surface on the Si-Si network structure are discussed.

引用

页码：533 / 535

页数：3

共 12 条

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