PREPARATION OF HIGHLY PHOTOCONDUCTIVE HYDROGENATED AMORPHOUS-SILICON CARBIDE FILMS WITH A MULTIPLASMA-ZONE APPARATUS

被引：12

作者：

ASANO, A

ICHIMURA, T

SAKAI, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.342813

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2439 / 2444

页数：6

共 15 条

[1]

ALJISHI S, 1986, MATER RES SOC S P, V70, P269

[2]

AMER NM, 1984, SEMICONDUCT SEMIMET, V21, P83

[3] CHARACTERIZATION OF A-SI1-XCX-H A-SI-H AND A-SIN-H A-SI-H HETEROJUNCTIONS BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J].

ASANO, A ;

ICHIMURA, T ;

UCHIDA, Y ;

SAKAI, H .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) :2346-2351

[4] KINETIC ELLIPSOMETRY STUDY OF THE HYDROGEN PLASMA-ETCHING OF HYDROGENATED AMORPHOUS-SILICON FILMS [J].

GODET, C ;

DREVILLON, B .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04) :2482-2489

[5] FLUORINATED AMORPHOUS SILICON-GERMANIUM ALLOYS DEPOSITED FROM DISILANE GERMANE MIXTURE [J].

GUHA, S ;

PAYSON, JS ;

AGARWAL, SC ;

OVSHINSKY, SR .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :1455-1458

[6] HYDROGENATED AMORPHOUS-SILICON GERMANIUM ALLOYS PREPARED BY TRIODE RF GLOW-DISCHARGE [J].

ICHIMURA, T ;

IHARA, T ;

HAMA, T ;

OHSAWA, M ;

SAKAI, H ;

UCHIDA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (04) :L276-L278

[7]

ICHIMURA T, 1987, 3RD P INT PHOT SCI E, P53

[8] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J].

JACKSON, WB ;

AMER, NM .

PHYSICAL REVIEW B, 1982, 25 (08) :5559-5562

[9] ARGON SPUTTERING ANALYSIS OF THE GROWING SURFACE OF HYDROGENATED AMORPHOUS-SILICON FILMS [J].

LIN, GH ;

DOYLE, JR ;

HE, MZ ;

GALLAGHER, A .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (01) :188-194

[10] INFLUENCE OF MICROSTRUCTURE ON THE PHOTOCONDUCTIVITY OF GLOW-DISCHARGE DEPOSITED AMORPHOUS SIC-H AND AMORPHOUS SIGE-H ALLOYS [J].

MAHAN, AH ;

RABOISSON, P ;

TSU, R .

APPLIED PHYSICS LETTERS, 1987, 50 (06) :335-337

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