CHARACTERIZATION OF A-SI1-XCX-H A-SI-H AND A-SIN-H A-SI-H HETEROJUNCTIONS BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY

被引：22

作者：

ASANO, A

ICHIMURA, T

UCHIDA, Y

SAKAI, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 07期

关键词：

D O I：

10.1063/1.341050

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2346 / 2351

页数：6

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共 19 条

[1] INFRARED-SPECTROSCOPY OF INTERFACES IN AMORPHOUS HYDROGENATED SILICON SILICON-NITRIDE SUPERLATTICES
ABELES, B
YANG, L
PERSANS, PD
STASIEWSKI, HS
LANFORD, W
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (02) : 168 - 170
[2] AMER NM, 1984, SEMICONDUCT SEMIMET, V21, P83
[3] SUBGAP ABSORPTION OF BORON-DOPED AND UNDOPED A-SIC-H DETECTED BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY
ASANO, A
ICHIMURA, T
SAKAI, H
UCHIDA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (05): : L388 - L390
[4] ASANO A, 1984, 31ST SPRING M JAP SO, P409
[5] THE DESIGN OF OPTICAL FILTERS
EPSTEIN, LI
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1952, 42 (11) : 806 - 810
[6] PHOTOEMISSION-STUDIES OF A-SIXC1-X-H/A-SI AND A-SIXC1-X-H/HYDROGENATED AMORPHOUS-SILICON HETEROJUNCTIONS
EVANGELISTI, F
FIORINI, P
GIOVANNELLA, C
PATELLA, F
PERFETTI, P
QUARESIMA, C
CAPOZI, M
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 764 - 766
[7] INVESTIGATION OF SURFACE PASSIVATION OF AMORPHOUS-SILICON USING PHOTOTHERMAL DEFLECTION SPECTROSCOPY
FRYE, RC
KUMLER, JJ
WONG, CC
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (02) : 101 - 103
[8] PHOTOTHERMAL DEFLECTION SPECTROSCOPY AND DETECTION
JACKSON, WB
AMER, NM
BOCCARA, AC
FOURNIER, D
[J]. APPLIED OPTICS, 1981, 20 (08): : 1333 - 1344
[9] OPTICAL-ABSORPTION SPECTRA OF SURFACE OR INTERFACE STATES IN HYDROGENATED AMORPHOUS-SILICON
JACKSON, WB
BIEGELSEN, DK
NEMANICH, RJ
KNIGHTS, JC
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 105 - 107
[10] PROPERTIES OF AMORPHOUS SEMICONDUCTING MULTILAYER FILMS
KAKALIOS, J
FRITZSCHE, H
IBARAKI, N
OVSHINSKY, SR
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 339 - 344