INVESTIGATION OF SURFACE PASSIVATION OF AMORPHOUS-SILICON USING PHOTOTHERMAL DEFLECTION SPECTROSCOPY

被引：24

作者：

FRYE, RC

KUMLER, JJ

WONG, CC

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 02期

关键词：

D O I：

10.1063/1.97866

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：101 / 103

页数：3

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[1] SENSITIVE PHOTOTHERMAL DEFLECTION TECHNIQUE FOR MEASURING ABSORPTION IN OPTICALLY THIN MEDIA
BOCCARA, AC
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[J]. OPTICS LETTERS, 1980, 5 (09) : 377 - 379
[2] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY
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AMER, NM
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562
[3] PHOTOTHERMAL DEFLECTION SPECTROSCOPY AND DETECTION
JACKSON, WB
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FOURNIER, D
[J]. APPLIED OPTICS, 1981, 20 (08): : 1333 - 1344
[4] OPTICAL-ABSORPTION SPECTRA OF SURFACE OR INTERFACE STATES IN HYDROGENATED AMORPHOUS-SILICON
JACKSON, WB
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NEMANICH, RJ
KNIGHTS, JC
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 105 - 107
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[J]. SOLID STATE COMMUNICATIONS, 1983, 47 (12) : 985 - 987