INFRARED-SPECTROSCOPY OF INTERFACES IN AMORPHOUS HYDROGENATED SILICON SILICON-NITRIDE SUPERLATTICES

被引：39

作者：

ABELES, B ^{[1
]}

YANG, L ^{[1
]}

PERSANS, PD ^{[1
]}

STASIEWSKI, HS ^{[1
]}

LANFORD, W ^{[1
]}

机构：

[1] SUNY ALBANY,ALBANY,NY 12222

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 02期

关键词：

D O I：

10.1063/1.96932

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：168 / 170

页数：3

共 10 条

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[8] CHARGE-TRANSFER DOPING IN AMORPHOUS-SEMICONDUCTOR SUPERLATTICES [J].

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APPLIED PHYSICS LETTERS, 1984, 45 (02) :179-181

[9]

TIEDJE T, 1984, AIP C P, V120, P416

[10] INTERFACE DENSITY OF NEUTRAL DANGLING BONDS IN A-SI-H/A-SINX-H SUPERLATTICES [J].

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