CHARGE-TRANSFER DOPING IN AMORPHOUS-SEMICONDUCTOR SUPERLATTICES

[1] AMORPHOUS-SEMICONDUCTOR SUPER-LATTICES [J]. PHYSICAL REVIEW LETTERS, 1983, 51 (21) : 2003 - 2006

[2] ALVAREZ F, 1984, APPL PHYS LETT, V44, P117

[3] Cody G.D., 1984, HYDROGENATED AMORPHO, V21B, P11

[4] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5285 - 5320

[5] THE HEMT - A SUPERFAST TRANSISTOR [J]. IEEE SPECTRUM, 1984, 21 (02) : 28 - 35

[6] COMMENT ON THE OPTICAL-ABSORPTION EDGE IN ALPHA-SI-H [J]. SOLID STATE COMMUNICATIONS, 1983, 47 (12) : 985 - 987

[7] SURFACE-STATES IN P-DOPED AND B-DOPED AMORPHOUS HYDROGENATED SILICON [J]. PHYSICAL REVIEW B, 1983, 28 (12): : 7080 - 7086

[8] RECOMBINATION CENTERS IN PHOSPHORUS DOPED HYDROGENATED AMORPHOUS-SILICON [J]. SOLID STATE COMMUNICATIONS, 1982, 44 (10) : 1423 - 1426

[1] AMORPHOUS-SEMICONDUCTOR SUPER-LATTICES [J]. PHYSICAL REVIEW LETTERS, 1983, 51 (21) : 2003 - 2006

[2] ALVAREZ F, 1984, APPL PHYS LETT, V44, P117

[3] Cody G.D., 1984, HYDROGENATED AMORPHO, V21B, P11

[4] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5285 - 5320

[5] THE HEMT - A SUPERFAST TRANSISTOR [J]. IEEE SPECTRUM, 1984, 21 (02) : 28 - 35

[6] COMMENT ON THE OPTICAL-ABSORPTION EDGE IN ALPHA-SI-H [J]. SOLID STATE COMMUNICATIONS, 1983, 47 (12) : 985 - 987

[7] SURFACE-STATES IN P-DOPED AND B-DOPED AMORPHOUS HYDROGENATED SILICON [J]. PHYSICAL REVIEW B, 1983, 28 (12): : 7080 - 7086

[8] RECOMBINATION CENTERS IN PHOSPHORUS DOPED HYDROGENATED AMORPHOUS-SILICON [J]. SOLID STATE COMMUNICATIONS, 1982, 44 (10) : 1423 - 1426