SURFACE-STATES IN P-DOPED AND B-DOPED AMORPHOUS HYDROGENATED SILICON

被引：38

作者：

WAGNER, I ^{[1
]}

STASIEWSKI, H ^{[1
]}

ABELES, B ^{[1
]}

LANFORD, WA ^{[1
]}

机构：

[1] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222

来源：

PHYSICAL REVIEW B | 1983年 / 28卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.28.7080

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7080 / 7086

页数：7

共 27 条

[1] HYDROGENATED AMORPHOUS-SILICON SOLAR-CELLS
ABELES, B
CODY, GD
GOLDSTEIN, Y
TIEDJE, T
WRONSKI, CR
[J]. THIN SOLID FILMS, 1982, 90 (04) : 441 - 449
[2] BAYER W, 1981, SOLID STATE COMMUN, V39, P367
[3] OPTICAL CHARACTERIZATION OF AMORPHOUS-SILICON HYDRIDE FILMS
CODY, GD
WRONSKI, CR
ABELES, B
STEPHENS, RB
BROOKS, B
[J]. SOLAR CELLS, 1980, 2 (03): : 227 - 243
[4] DISORDER AND THE OPTICAL-ABSORPTION EDGE OF HYDROGENATED AMORPHOUS-SILICON
CODY, GD
TIEDJE, T
ABELES, B
BROOKS, B
GOLDSTEIN, Y
[J]. PHYSICAL REVIEW LETTERS, 1981, 47 (20) : 1480 - 1483
[5] CODY GD, COMMUNICATION
[6] CONDUCTIVITY, THERMOPOWER, AND STATISTICAL SHIFT IN AMORPHOUS-SEMICONDUCTORS
DOHLER, GH
[J]. PHYSICAL REVIEW B, 1979, 19 (04): : 2083 - 2091
[7] PHOTOEMISSION STUDIES OF 2P CORE LEVELS OF PURE AND HEAVILY DOPED SILICON
EBERHARDT, W
KALKOFFEN, G
KUNZ, C
ASPNES, D
CARDONA, M
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1978, 88 (01): : 135 - 143
[8] RADIATION-INDUCED INCREASE IN SURFACE RECOMBINATION VELOCITY OF THERMALLY OXIDIZED SILICON STRUCTURES
FITZGERA.DJ
GROVE, AS
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (11): : 1601 - +
[9] SURFACE PHOTO-VOLTAGE, BAND-BENDING AND SURFACE-STATES ON A-SI-H
GOLDSTEIN, B
SZOSTAK, DJ
[J]. SURFACE SCIENCE, 1980, 99 (02) : 235 - 258
[10] USE OF NUCLEAR-REACTION ANALYSIS TO CHARACTERIZE THE ELEMENTAL COMPOSITION AND DENSITY OF THIN-FILM AMORPHOUS-SILICON
LANFORD, WA
[J]. SOLAR CELLS, 1980, 2 (04): : 351 - 363