ARGON SPUTTERING ANALYSIS OF THE GROWING SURFACE OF HYDROGENATED AMORPHOUS-SILICON FILMS

被引：37

作者：

LIN, GH ^{[1
]}

DOYLE, JR ^{[1
]}

HE, MZ ^{[1
]}

GALLAGHER, A ^{[1
]}

机构：

[1] UNIV COLORADO,BOULDER,CO 80309

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 01期

关键词：

D O I：

10.1063/1.341461

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：188 / 194

页数：7

相关论文

共 21 条

[1] ENERGY-DISTRIBUTIONS OF PARTICLES STRIKING THE CATHODE IN A GLOW-DISCHARGE
ABRIL, I
GRASMARTI, A
VALLESABARCA, JA
[J]. PHYSICAL REVIEW A, 1983, 28 (06): : 3677 - 3678
[2] Betz G., 1983, SPUTTERING PARTICLE, VII
[3] SIMS ANALYSIS OF DEUTERIUM DIFFUSION IN HYDROGENATED AMORPHOUS SILICON
CARLSON, DE
MAGEE, CW
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 81 - 83
[4] THE NUCLEATION AND GROWTH OF GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON
COLLINS, RW
PAWLOWSKI, A
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) : 1160 - 1166
[5] THE EFFECT OF INERT-GAS PLASMA EXPOSURE ON THE SURFACE-STRUCTURE OF HYDROGENATED AMORPHOUS-SILICON (A-SI-H)
COLLINS, RW
TUCKERMAN, CJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (05): : 2343 - 2349
[6] DERRIEN J, 1987, APPL PHYS LETT, V33, P881
[7] A SPECTROSCOPIC ELLIPSOMETRY STUDY OF THE NUCLEATION AND GROWTH OF PLASMA-DEPOSITED AMORPHOUS-SILICON
DREVILLON, B
[J]. THIN SOLID FILMS, 1985, 130 (1-2) : 165 - 170
[8] GALLAGHER A, 1981, SERI XB2021891 FIN R
[9] GALLAGHER A, 1986, SERI DB4040761 FIN R
[10] EFFECTS OF ENHANCED DIFFUSION ON PREFERRED SPUTTERING OF HOMOGENEOUS ALLOY SURFACES
HO, PS
[J]. SURFACE SCIENCE, 1978, 72 (02) : 253 - 263