共 24 条
[3]
INVESTIGATION OF EFFECTIVE-MEDIUM MODELS OF MICROSCOPIC SURFACE-ROUGHNESS BY SPECTROSCOPIC ELLIPSOMETRY
[J].
PHYSICAL REVIEW B,
1979, 20 (08)
:3292-3302
[4]
DIELECTRIC-PROPERTIES OF HEAVILY DOPED CRYSTALLINE AND AMORPHOUS-SILICON FROM 1.5 TO 6.0 EV
[J].
PHYSICAL REVIEW B,
1984, 29 (02)
:768-779
[5]
ASPNES DE, 1981, SPIE P, V276, P188
[6]
ASPNES DE, 1975, J OPT SOC AM, V64, P812
[8]
INFLUENCE OF ION-BOMBARDMENT ON MICROSTRUCTURE OF THICK DEPOSITS PRODUCED BY HIGH RATE PHYSICAL VAPOR-DEPOSITION PROCESSES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1972, 9 (06)
:1404-&
[9]
CHAPMAN B, 1980, GLOW DISCHARGE PROCE, P168
[10]
Collins R. W., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V617, P62, DOI 10.1117/12.961074