THE EFFECT OF INERT-GAS PLASMA EXPOSURE ON THE SURFACE-STRUCTURE OF HYDROGENATED AMORPHOUS-SILICON (A-SI-H)

被引:8
作者
COLLINS, RW
TUCKERMAN, CJ
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 05期
关键词
D O I
10.1116/1.574074
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:2343 / 2349
页数:7
相关论文
共 24 条
[1]   GROWTH-PROCESSES OF RF GLOW-DISCHARGE DEPOSITED A-SI-H AND A-GE-H FILMS [J].
ANTOINE, AM ;
DREVILLON, B ;
CABARROCAS, PRI .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :769-772
[2]   AN INVESTIGATION OF ION-BOMBARDED AND ANNEALED (111) SURFACES OF GE BY SPECTROSCOPIC ELLIPSOMETRY [J].
ASPNES, DE ;
STUDNA, AA .
SURFACE SCIENCE, 1980, 96 (1-3) :294-306
[3]   INVESTIGATION OF EFFECTIVE-MEDIUM MODELS OF MICROSCOPIC SURFACE-ROUGHNESS BY SPECTROSCOPIC ELLIPSOMETRY [J].
ASPNES, DE ;
THEETEN, JB .
PHYSICAL REVIEW B, 1979, 20 (08) :3292-3302
[4]   DIELECTRIC-PROPERTIES OF HEAVILY DOPED CRYSTALLINE AND AMORPHOUS-SILICON FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA ;
KINSBRON, E .
PHYSICAL REVIEW B, 1984, 29 (02) :768-779
[5]  
ASPNES DE, 1981, SPIE P, V276, P188
[6]  
ASPNES DE, 1975, J OPT SOC AM, V64, P812
[8]   INFLUENCE OF ION-BOMBARDMENT ON MICROSTRUCTURE OF THICK DEPOSITS PRODUCED BY HIGH RATE PHYSICAL VAPOR-DEPOSITION PROCESSES [J].
BUNSHAH, RF ;
JUNTZ, RS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (06) :1404-&
[9]  
CHAPMAN B, 1980, GLOW DISCHARGE PROCE, P168
[10]  
Collins R. W., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V617, P62, DOI 10.1117/12.961074