GROWTH-PROCESSES OF RF GLOW-DISCHARGE DEPOSITED A-SI-H AND A-GE-H FILMS

[1] CABARROCAS PRI, 1985, 7TH INT S PLASM CHEM, P136

[2] OXIDATION OF PLASMA-DEPOSITED HYDROGENATED AMORPHOUS-SILICON [J]. THIN SOLID FILMS, 1985, 124 (3-4) : 217 - 222

[3] GROWTH OF HYDROGENATED AMORPHOUS-SILICON DUE TO CONTROLLED ION-BOMBARDMENT FROM A PURE SILANE PLASMA [J]. APPLIED PHYSICS LETTERS, 1983, 42 (09) : 801 - 803

[4] FAST POLARIZATION MODULATED ELLIPSOMETER USING A MICROPROCESSOR SYSTEM FOR DIGITAL FOURIER-ANALYSIS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1982, 53 (07) : 969 - 977

[5] DREVILLON B, 1985, THIN SOLID FILMS

[6] KNIGHTS JC, 1984, PHYSICS HYDROGENATED, V1, P5

[1] CABARROCAS PRI, 1985, 7TH INT S PLASM CHEM, P136

[2] OXIDATION OF PLASMA-DEPOSITED HYDROGENATED AMORPHOUS-SILICON [J]. THIN SOLID FILMS, 1985, 124 (3-4) : 217 - 222

[3] GROWTH OF HYDROGENATED AMORPHOUS-SILICON DUE TO CONTROLLED ION-BOMBARDMENT FROM A PURE SILANE PLASMA [J]. APPLIED PHYSICS LETTERS, 1983, 42 (09) : 801 - 803

[4] FAST POLARIZATION MODULATED ELLIPSOMETER USING A MICROPROCESSOR SYSTEM FOR DIGITAL FOURIER-ANALYSIS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1982, 53 (07) : 969 - 977

[5] DREVILLON B, 1985, THIN SOLID FILMS

[6] KNIGHTS JC, 1984, PHYSICS HYDROGENATED, V1, P5