A STUDY OF ELECTROMIGRATION IN ALUMINUM AND ALUMINUM SILICON THIN-FILM RESISTORS USING NOISE TECHNIQUE

被引：30

作者：

DILIGENTI, A

BAGNOLI, PE

NERI, B

BEA, S

MANTELLASSI, L

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 01期

关键词：

D O I：

10.1016/0038-1101(89)90042-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：11 / 16

页数：6

共 14 条

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