POLYSILYNE THIN-FILMS AS RESISTS FOR DEEP ULTRAVIOLET LITHOGRAPHY

被引：20

作者：

KUNZ, RR ^{[1
]}

HORN, MW ^{[1
]}

GOODMAN, RB ^{[1
]}

BIANCONI, PA ^{[1
]}

SMITH, DA ^{[1
]}

FREED, CA ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT CHEM,UNIVERSITY PK,PA 16802

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 06期

关键词：

D O I：

10.1116/1.585166

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new class of organosilane polymers, the polysilynes, have been examined as resist materials for deep ultraviolet lithography. These polymers have the formula [SiR](n), and polymers with R = n-propyl, n-butyl, isobutyl, amyl, cyclohexyl, and phenyl have been examined. Photolysis of polysilyne films with 193, 215, or 254 nm light results in the formation of an organosiloxane. Latent images of this oxidized material can be selectively developed yielding a negative tone image either by wet development in toluene or dry development in a Cl2 or HBr plasma. The best sensitivities at 193 nm were 20 mJ/cm2 for wet developed poly(n-butylsilyne) and 200 mJ/cm2 for dry developed poly(phenylsilyne). Positive tone wet development in polar solvents, such as acetone, is incomplete and yields a thin, insoluble residue layer.

引用

页码：1820 / 1825

页数：6

共 12 条

[1] ULTRASOUND-MEDIATED REDUCTIVE CONDENSATION SYNTHESIS OF SILICON SILICON BONDED NETWORK POLYMERS [J].