LOW-FIELD GALVANOMAGNETIC TRANSPORT IN N-TYPE GALLIUM-ARSENIDE

被引:3
作者
NAG, BR
CHATTOPADHYAY, D
DUTTA, GM
机构
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1972年 / 12卷 / 02期
关键词
D O I
10.1002/pssa.2210120223
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
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页码:533 / +
页数:1
相关论文
共 7 条
[1]  
DEVLIN SS, 1967, PHYSICS CHEM 2 6 COM, P551
[2]   ELECTRON SCATTERING IN INSB [J].
EHRENREICH, H .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (02) :131-149
[3]   ANALYSIS OF POLAR OPTICAL SCATTERING OF ELECTRONS IN GAAS [J].
FORTINI, A ;
DIGUET, D ;
LUGAND, J .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :3121-&
[4]   THE THEORY OF ELECTRONIC CONDUCTION IN POLAR SEMI-CONDUCTORS [J].
HOWARTH, DJ ;
SONDHEIMER, EH .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1953, 219 (1136) :53-74
[5]  
LEWIS BF, 1954, P ROY SOC LOND A MAT, V227, P241
[6]   ELECTRON MOBILITY IN DIRECT-GAP POLAR SEMICONDUCTORS [J].
RODE, DL .
PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (04) :1012-+
[7]   HALL COEFFICIENT FACTOR FOR POLAR MODE SCATTERING IN N-TYPE GAAS [J].
STILLMAN, GE ;
WOLFE, CM ;
DIMMOCK, JO .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (06) :1199-&