HALL COEFFICIENT FACTOR FOR POLAR MODE SCATTERING IN N-TYPE GAAS

[1] HIGH-TEMPERATURE HALL COEFFICIENT IN GAS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (05) : 939 - 940

[2] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J]. PHYSICAL REVIEW, 1950, 80 (01): : 72 - 80

[3] Brooks H., 1955, ADVAN ELECTRON ELECT, V7, P158

[4] THEORETICAL TRANSPORT COEFFICIENTS FOR POLAR SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (472): : 572 - 576

[5] DEVLIN SS, 1964, THESIS CASE I TECHNO

[6] DEVLIN SS, 1967, PHYSICS CHEM 2 6 COM, P551

[7] TRANSPORT OF ELECTRONS IN INTRINSIC INSB [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (02) : 129 - 148

[8] OPTICAL ABSORPTION OF GALLIUM ARSENIDE IN RESTSTRAHLEN BAND [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 77 (493): : 215 - &

[9] THE THEORY OF ELECTRONIC CONDUCTION IN POLAR SEMI-CONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1953, 219 (1136): : 53 - 74

[10] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 178 - &

[1] HIGH-TEMPERATURE HALL COEFFICIENT IN GAS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (05) : 939 - 940

[2] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J]. PHYSICAL REVIEW, 1950, 80 (01): : 72 - 80

[3] Brooks H., 1955, ADVAN ELECTRON ELECT, V7, P158

[4] THEORETICAL TRANSPORT COEFFICIENTS FOR POLAR SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (472): : 572 - 576

[5] DEVLIN SS, 1964, THESIS CASE I TECHNO

[6] DEVLIN SS, 1967, PHYSICS CHEM 2 6 COM, P551

[7] TRANSPORT OF ELECTRONS IN INTRINSIC INSB [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (02) : 129 - 148

[8] OPTICAL ABSORPTION OF GALLIUM ARSENIDE IN RESTSTRAHLEN BAND [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 77 (493): : 215 - &

[9] THE THEORY OF ELECTRONIC CONDUCTION IN POLAR SEMI-CONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1953, 219 (1136): : 53 - 74

[10] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 178 - &