FABRICATION AND TOTAL DOSE TESTING OF A 256KX1 RADIATION HARDENED SRAM

被引：9

作者：

KUSHNER, RA ^{[1
]}

KOHLER, RA ^{[1
]}

STEENWYK, SD ^{[1
]}

DESKO, JC ^{[1
]}

ALCHESKY, LC ^{[1
]}

ARNOLD, RH ^{[1
]}

BENEVIT, CA ^{[1
]}

CLEMONS, DG ^{[1
]}

LONGFELLOW, DA ^{[1
]}

LEE, KH ^{[1
]}

FLORES, RS ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1988年 / 35卷 / 06期

关键词：

*The authors would like to acknowledge the support of the United States Air Force Space Division; and the Defense Nuclear Agency;

D O I：

10.1109/23.25518

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1667 / 1669

页数：3

共 4 条

[1]

CENKER RP, 1979, FEB IEEE INT SOL STA

[2]

FJ JS, 1987, DEC P INT EL DEV M W

[3] 2 13-NS 64K CMOS SRAMS WITH VERY LOW ACTIVE POWER AND IMPROVED ASYNCHRONOUS CIRCUIT TECHNIQUES [J].

FLANNAGAN, ST ;

REED, PA ;

VOSS, PH ;

NOGLE, SG ;

DAY, LJ ;

SHENG, DY ;

BARNES, JJ ;

KUNG, RI .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1986, 21 (05) :692-703

[4] RADIATION HARD 10 MU-M CMOS TECHNOLOGY [J].

LEE, KH ;

DESKO, JC ;

KOHLER, RA ;

LAWRENCE, CW ;

NAGY, WJ ;

SHIMER, JA ;

STEENWYK, SD ;

ANDERSON, RE ;

FU, JS .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1460-1463

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