THIN-FILM, ACCUMULATION-MODE PARA-CHANNEL SOI MOSFETS

被引：17

作者：

COLINGE, JP

机构：

[1] Hewlett Packard Ct R&D, Palo, Alto, CA, USA, Hewlett Packard Ct R&D, Palo Alto, CA, USA

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 05期

关键词：

SEMICONDUCTING SILICON - TRANSISTORS; FIELD EFFECT;

D O I：

10.1049/el:19880172

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical characteristics of thin-film (100 nm), accumulation-mode SOI p-channel MOSFETs are reported and compared to simulation. In the OFF regime, the p-type channel is fully depleted. As a result, low values of leakage current are obtained. Good threshold voltage control is obtained.

引用

页码：257 / 258

页数：2