CMOS CIRCUITS MADE IN THIN SIMOX FILMS

MOS transistors and ring oscillators have been fabricated in thin (100 nm) SIMOX films. As has been theoretically predicted, no 'kink' effect is observed in the n-channel devices, the inverse subthreshold slope is lower than in bulk devices (70 mv/decade against 110 mv/decade in bulk), and the dependence of threshold voltage on gate length is much less pronounced than in the bulk.