REDUCTION OF FLOATING SUBSTRATE EFFECT IN THIN-FILM SOI MOSFETS

[1] FABRICATION OF THIN SILICON-ON-INSULATOR FILMS USING LASER RECRYSTALLIZATION [J]. ELECTRONICS LETTERS, 1985, 21 (23) : 1102 - 1103

[2] EFFECT OF A FLOATING SUBSTRATE ON OPERATION OF SILICON-ON-SAPPHIRE TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) : 907 - 912

[3] Hatano H., 1981, International Electron Devices Meeting, P359

[4] KATO K, 1985, 2ND INT WORKSH FUT E, P123

[5] Merckel G., 1977, NATO COURSE PROCESS, P725

[6] SZE SM, 1981, PHYSICS SEMICONDUCTO, P493

[7] PROPERTIES OF ESFI MOS-TRANSISTORS DUE TO FLOATING SUBSTRATE AND FINITE VOLUME [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1017 - 1023

[8] SOI CMOS CIRCUITS FABRICATED IN ZONE-MELTING-RECRYSTALLIZED SI FILMS ON SIO2-COATED SI SUBSTRATES [J]. ELECTRON DEVICE LETTERS, 1982, 3 (12): : 398 - 401

[1] FABRICATION OF THIN SILICON-ON-INSULATOR FILMS USING LASER RECRYSTALLIZATION [J]. ELECTRONICS LETTERS, 1985, 21 (23) : 1102 - 1103

[2] EFFECT OF A FLOATING SUBSTRATE ON OPERATION OF SILICON-ON-SAPPHIRE TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) : 907 - 912

[3] Hatano H., 1981, International Electron Devices Meeting, P359

[4] KATO K, 1985, 2ND INT WORKSH FUT E, P123

[5] Merckel G., 1977, NATO COURSE PROCESS, P725

[6] SZE SM, 1981, PHYSICS SEMICONDUCTO, P493

[7] PROPERTIES OF ESFI MOS-TRANSISTORS DUE TO FLOATING SUBSTRATE AND FINITE VOLUME [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1017 - 1023

[8] SOI CMOS CIRCUITS FABRICATED IN ZONE-MELTING-RECRYSTALLIZED SI FILMS ON SIO2-COATED SI SUBSTRATES [J]. ELECTRON DEVICE LETTERS, 1982, 3 (12): : 398 - 401