MELTING AND DAMAGE PRODUCTION IN SILICON-CARBIDE UNDER PULSED LASER IRRADIATION

被引：9

作者：

BOURDELLE, KK

CHECHENIN, NG

AKHMANOV, AS

POROIKOV, AY

SUVOROV, AV

机构：

[1] RUSSIAN ACAD SCI,ST PETERSBURG 194021,RUSSIA

[2] AF IOFFE PHYS TECH INST,ST PETERSBURG,RUSSIA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 121卷 / 02期

关键词：

D O I：

10.1002/pssa.2211210206

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of excimer (XeCl) laser (τ = 30 ns, λ = 308 nm) pulse irradiation on SiC(6H) crystals and on Ga‐implanted SiC samples is studied. It is shown that at a sufficiently high pulse energy density the crystalline and amorphised samples melt and the resolidification of the melt produced is accompanied by intense damage production. The results are discussed in the thermal model of laser irradiation. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：399 / 406

页数：8

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