FAR-INFRARED EMISSION BY RESONANT-POLARON EFFECTS IN NARROW-BAND-GAP HG1-XCDXTE

被引：10

作者：

FUCHS, F ^{[1
]}

SCHNEIDER, H ^{[1
]}

KOIDL, P ^{[1
]}

SCHWARZ, K ^{[1
]}

WALCHER, H ^{[1
]}

TRIBOULET, R ^{[1
]}

机构：

[1] CNRS BELLEVUE, PHYS SOLIDES LAB, F-92190 MEUDON, FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 67卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.67.1310

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on the first experimental observation of far-infrared emission within the reststrahlen band of a semiconductor. We have performed Fourier-transform emission experiments on narrow-band-gap Hg1-xCdxTe (x almost-equal-to 0.17). Under Ar+-laser excitation, we find an emission spectrum at the longitudinal-optical-phonon energies of the material (137.5 and 157.5 cm-1). The appearance of the optical emission signal is caused by interband polaron effects arising from the resonant matching between longitudinal-optical phonons and electron-hole excitations, as suggested in recent theoretical calculations.

引用

页码：1310 / 1313

页数：4

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