ELECTRONIC-STRUCTURE OF CU(100), AG(100), AU(100), AND CU3AU(100) FROM INVERSE PHOTOEMISSION

被引:60
作者
HIMPSEL, FJ
ORTEGA, JE
机构
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
来源
PHYSICAL REVIEW B | 1992年 / 46卷 / 15期
关键词
D O I
10.1103/PhysRevB.46.9719
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Important parameters of the bulk and surface electronic structure are obtained for Cu(100), Ag(100), Au(100), and Cu3Au(100) surfaces using inverse photoemission with a high-resolution, tunable detector. The transitions from the Fermi level to the upper DELTA1 s,p band are found at 10.5, 9.6, 7.9, and 10.2 eV along the [100] direction, respectively. Their widths are about 1.3 eV. Upper limits for the X4' points are found from the intensity cutoff above the band edge at 1.8, 1.9, 2.3, and 1.8 eV, with the best estimates for the X4' positions at 1.8, 1.6, 1.6, and 1.8 eV. The n = 1 image states are located at 4.1, 3.9, 4.75 (4.85), and 4.5 eV. A possible n = 0 surface resonance is seen at 1.4, 1.3, 1.5, and 1. 3 eV.
引用
收藏
页码:9719 / 9723
页数:5
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