RF PERFORMANCE OF SIC MESFETS ON HIGH-RESISTIVITY SUBSTRATES

被引：53

作者：

SRIRAM, S

CLARKE, RC

BURK, AA

HOBGOOD, HM

MCMULLIN, PG

ORPHANOS, PA

SIERGIEJ, RR

SMITH, TJ

BRANDT, CD

DRIVER, MC

HOPKINS, RH

机构：

[1] Westinghouse Science and Technology Center, Pitts-burgh

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 11期

关键词：

MESFET devices;

D O I：

10.1109/55.334666

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

State-of-the art SiC MESFET's showing a record high f(max) of 26 GHz and RF gain of 8.5 dB at 10 GHz are described in this paper. These results were obtained by using high-resistivity SiC substrates for the first time to minimize substrate parasitics. The fabrication and characterization of these devices are discussed.

引用

页码：458 / 459

页数：2