LARGE-DIAMETER 6H-SIC FOR MICROWAVE DEVICE APPLICATIONS

被引：77

作者：

HOBGOOD, HM ^{[1
]}

BARRETT, DL ^{[1
]}

MCHUGH, JP ^{[1
]}

CLARKE, RC ^{[1
]}

SRIRAM, S ^{[1
]}

BURK, AA ^{[1
]}

GREGGI, J ^{[1
]}

BRANDT, CD ^{[1
]}

HOPKINS, RH ^{[1
]}

CHOYKE, WJ ^{[1
]}

机构：

[1] UNIV PITTSBURGH,DEPT PHYS & ASTRON,PITTSBURGH,PA 15260

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 137卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(94)91269-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

6H-polytype SiC single crystals with diameters up to 50 mm and lengths up to 75 mm have been grown in the c-and a-axis directions by physical vapor transport (PVT) at growth rates of 0.25 to 1 mm h-1. Undoped crystals grown from purified source material reveal residual impurity concentrations in the 10(16) cm-3 range and resistivities up to 1000 OMEGA . cm. N+ crystals with resistivities < 0.02 OMEGA . cm have been produced bv controlled nitrogen doping. PVT-grown SiC crystals are characterized by dislocation densities of 10(4) to 10(5) cm-2 and can also exhibit micropipe defects in the 10(2) to 10(3) cm-2 range.

引用

页码：181 / 186

页数：6

共 7 条

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CLARKE, RC
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