THEORETICAL INVESTIGATIONS OF FLUORINE SILICON SYSTEMS

被引：7

作者：

VAN DE WALLE, CG

BARYAM, Y

MCFEELY, FR

PANTELIDES, ST

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.575219

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：1973 / 1974

页数：2

相关论文

共 11 条

[1] ELECTRONIC-STRUCTURE AND TOTAL-ENERGY MIGRATION BARRIERS OF SILICON SELF-INTERSTITIALS
BARYAM, Y
JOANNOPOULOS, JD
[J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1844 - 1852
[2] BARYAM Y, IN PRESS
[3] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD
CEPERLEY, DM
ALDER, BJ
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (07) : 566 - 569
[4] NORM-CONSERVING PSEUDOPOTENTIALS
HAMANN, DR
SCHLUTER, M
CHIANG, C
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (20) : 1494 - 1497
[5] INHOMOGENEOUS ELECTRON-GAS
RAJAGOPAL, AK
CALLAWAY, J
[J]. PHYSICAL REVIEW B, 1973, 7 (05) : 1912 - 1919
[6] SELF-CONSISTENT EQUATIONS INCLUDING EXCHANGE AND CORRELATION EFFECTS
KOHN, W
SHAM, LJ
[J]. PHYSICAL REVIEW, 1965, 140 (4A): : 1133 - &
[7] SOFT-X-RAY PHOTOEMISSION-STUDY OF THE SILICON FLUORINE ETCHING REACTION
MCFEELY, FR
MORAR, JF
HIMPSEL, FJ
[J]. SURFACE SCIENCE, 1986, 165 (01) : 277 - 287
[8] BONDING OF FLUORINE-IMPLANTED AND ANNEALED SILICON
MOSLEY, LE
PAESLER, MA
LUCOVSKY, G
WALTNER, A
WORTMAN, JJ
[J]. SOLID STATE COMMUNICATIONS, 1985, 53 (06) : 513 - 517
[9] SELF-INTERACTION CORRECTION TO DENSITY-FUNCTIONAL APPROXIMATIONS FOR MANY-ELECTRON SYSTEMS
PERDEW, JP
ZUNGER, A
[J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5048 - 5079
[10] VANDEWALLE CG, IN PRESS