ELECTROLYTICAL DOPING OF SILICON WITH LITHIUM

被引：4

作者：

ANTULA, J

机构：

[1] 8 München 12

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 04期

关键词：

D O I：

10.1063/1.326232

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The results of the depth-profile analysis of p-type silicon, electrolytically doped with lithium, show in semilogarithmic representation a straight-line depth profile. The slope of this profile is in good agreement with the calculated Debye length, as would be expected from the theory presented here.

引用

页码：2721 / 2722

页数：2

共 6 条

[1] ELECTROCHEMICAL DOPING OF SILICON WITH ARSENIC [J].