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ELECTROCHEMICAL DOPING OF SILICON WITH ARSENIC

被引：7
作者：
ANTULA, J
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 06期
关键词：
D O I：
10.1063/1.323977
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：2581 / 2582
页数：2
相关论文
共 15 条
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[2]   INVESTIGATION OF CATHODIC REDUCTION OF LITHIUM AND ARSENIC IONS ON MONOCRYSTALLINE SILICON BY CYCLIC VOLTAMMETRY [J].
ANTULA, J ;
BECKER, BF .
JOURNAL OF PHYSICAL CHEMISTRY, 1975, 79 (23) :2470-2473
[3]   NEW METHOD FOR DOPING OF THIN INSULATING FILMS AND COMPARISON BETWEEN ELECTRICAL CHARACTERISTICS OF UNDOPED AND DOPED FILMS [J].
ANTULA, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :605-&
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ANTULA J, 1970, VIDE S147, V25, P125
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[7]  
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[9]  
HARTH W, 1972, HALBLEITERTECHNOLOGI, P59
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LIEBEL J, 1974, ANN CHEM, V46, pA22
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