REFLECTANCE MODELING FOR IN-SITU DRY ETCH MONITORING OF BULK SIO2 AND III-V MULTILAYER STRUCTURES

被引：16

作者：

HICKS, SE

PARKES, W

WILKINSON, JAH

WILKINSON, CDW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.587617

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3306 / 3310

页数：5

共 15 条

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