INSITU ETCHING DEPTH MONITORING FOR REACTIVE ION ETCHING OF INGAAS(P)/INP HETEROSTRUCTURES BY ELLIPSOMETRY

被引：17

作者：

MULLER, R

机构：

[1] Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbH, D-1000 Berlin 10

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 10期

关键词：

D O I：

10.1063/1.104099

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In situ ellipsometry at a wavelength of 1300 nm is used to control the etching depth in InGaAs(P)/InP heterostructures. A rotating analyzer ellipsometer, adapted to a parallel-plate reactor for reactive ion etching (RIE), monitors the decreasing layer thickness during the dry etching process. The momentary etching depth is determined with an accuracy of ±10 nm. Using a methane/hydrogen gas mixture for RIE a characteristic surface modification of the semiconductor material is observed.

引用

页码：1020 / 1021

页数：2