TRAPPING OF HYDROGEN IN DIAMOND

被引：7

作者：

INGRAM, DC ^{[1
]}

KEAY, JC ^{[1
]}

TANG, C ^{[1
]}

LAKE, ML ^{[1
]}

TING, JM ^{[1
]}

机构：

[1] APPL SCI INC,CEDARVILLE,OH 45314

来源：

关键词：

D O I：

10.1016/0925-9635(93)90150-Z

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Results are reported from the first studies of isotopically labeled hydrogen incorporated in chemical vapor deposition (CVD) diamond films. Unexpectedly high concentrations of hydrogen were found in both microwave and filament assisted CVD diamond samples when hydrogen (H-2) was replaced by deuterium (D-2) as the source of atomic ''hydrogen'' in the gas supplied to the reactor. This suggests that at least two separate mechanisms are responsible for trapping hydrogen in diamond. The method of detection for the hydrogen and deuterium was elastic recoil spectroscopy. Using scanning electron microscopy and Rutherford backscattering spectroscopy it was found that the nucleation density, crystal size and mean growth rate of the diamond films grown by microwave assisted CVD show no effect due to the substitution of deuterium. When deuterated methane replaced regular methane there were no significant differences in the films.

引用

页码：1414 / 1419

页数：6

共 11 条

[1] ABSOLUTE CROSS-SECTION FOR RECOIL DETECTION OF DEUTERIUM [J].