DISLOCATION BOUND-STATES IN COMPOUND SEMICONDUCTORS

In semiconductors, which have crystal structure without inversion symmetry, charge carriers interact with the long-range strain field of dislocations through the deformation potential and the piezoelectric couplings. The ground state energy level of the one-dimensional (1D) band in the potential, due to the long-range strain field of an edge dislocation, is estimated theoretically, using simple variational and perturbational methods. The ground state energy levels of the 1D band in n-type direct bandgap III-V and II-VI compound semiconductors are of the order of a few tens to one hundred meV. The contribution of the effect of the piezoelectric potential to the ground state energy level is relatively small, amounting to about 10 to 30% of the total energy. Finally the analogy of the 1D band associated with the dislocations with the 1D quantum well wire (QWW) is also pointed out.