PHASE-TRANSITIONS IN AMORPHOUS SI PRODUCED BY RAPID HEATING

被引：99

作者：

BAERI, P

FOTI, G

POATE, JM

CULLIS, AG

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

[2] ROYAL SIGNALS & RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND

来源：

PHYSICAL REVIEW LETTERS | 1980年 / 45卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.45.2036

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2036 / 2039

页数：4

共 9 条

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CAMPISANO, SU ;

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RIMINI, E .

APPLIED PHYSICS LETTERS, 1978, 33 (02) :137-140

[2] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

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RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[3]

BAGLEY BG, 1978, LASER SOLID INTERACT, P97

[4] SPECIFIC HEAT AND HEAT OF CRYSTALLIZATION OF AMORPHOUS GERMANIUM [J].

CHEN, HS ;

TURNBULL, D .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) :4214-&

[5] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE [J].

GREENWALD, AC ;

KIRKPATRICK, AR ;

LITTLE, RG ;

MINNUCCI, JA .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :783-787

[6]

Kodera H., 1963, JAP J APPL PHYS, V2, P212, DOI [10.1143/JJAP.2.212, DOI 10.1143/JJAP.2.212]

[7]

OLETTE M, 1957, CR HEBD ACAD SCI, V244, P1033

[8]

SPAEPEN F, 1978, LASER SOLID INTERACT, P73

[9]

1967, THERMOPHYSICAL PROPE, V1

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