MEASUREMENTS OF THE RATIO BETWEEN PLANAR AND RANDOM STOPPING POWER FOR 80 TO 300 KEV PROTONS IN SILICON

被引:16
作者
KUHRT, E
TAUBNER, F
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 61卷 / 02期
关键词
D O I
10.1002/pssa.2210610224
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
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页码:513 / 519
页数:7
相关论文
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