PHOTOCONDUCTIVE SAMPLING PROBE WITH 2.3-PS TEMPORAL RESOLUTION AND 4-MU-V SENSITIVITY

被引：42

作者：

KIM, JH ^{[1
]}

WILLIAMSON, S ^{[1
]}

NEES, J ^{[1
]}

WAKANA, S ^{[1
]}

WHITAKER, J ^{[1
]}

机构：

[1] FUJITSU LABS LTD,ATSUGI 24301,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 18期

关键词：

D O I：

10.1063/1.109437

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a novel probe technology which is applied to the measurement of high-speed guided electrical signals. The probe consists of a high-impedance gate fabricated using an interdigitated electrode structure on semi-insulating, low-temperature-grown GaAs, and its operation is based on the optoelectronic technique of photoconductive sampling. The probe has a dynamic range of > 10(6), permitting the linear measurement of short-duration signals with amplitudes ranging from microvolts up to several volts. Its resistance is 100 MOMEGA, and its capacitance is less than 0.1 fF, making this probe attractive for noninvasive, external circuit testing of ultrahigh-speed devices and circuits.

引用

页码：2268 / 2270

页数：3

共 8 条

[1] CAPACITANCE FREE GENERATION AND DETECTION OF SUBPICOSECOND ELECTRICAL PULSES ON COPLANAR TRANSMISSION-LINES [J].