SUBPICOSECOND CARRIER LIFETIME IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES

被引：353

作者：

GUPTA, S ^{[1
]}

FRANKEL, MY ^{[1
]}

VALDMANIS, JA ^{[1
]}

WHITAKER, JF ^{[1
]}

MOUROU, GA ^{[1
]}

SMITH, FW ^{[1
]}

CALAWA, AR ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 25期

关键词：

D O I：

10.1063/1.105729

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures is observed to have a significantly shorter carrier lifetime than GaAs grown at normal substrate temperatures. Using femtosecond time-resolved-reflectance techniques, a subpicosecond (< 0.4 ps) carrier lifetime has been measured for GaAs grown by MBE at approximately 200-degrees-C and annealed at 600-degrees-C. With the same material as a photoconductive switch we have measured electrical pulses with a full-width at half-maximum of 0.6 ps using the technique of electro-optic sampling. Good responsivity for a photoconductive switch is observed, corresponding to a mobility of the photoexcited carriers of approximately 120-150 cm2/V s. GaAs grown by MBE at 200-degrees-C and annealed at 600-degrees-C is also semi-insulating, which results in a low dark current in the switch application. The combination of fast recombination lifetime, high carrier mobility, and high resistivity makes this material ideal for a number of subpicosecond photoconductive applications.

引用

页码：3276 / 3278

页数：3

共 18 条

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