SUBPICOSECOND PHOTORESPONSE OF CARRIERS IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL IN0.52AL0.48AS/INP

被引：56

作者：

GUPTA, S ^{[1
]}

BHATTACHARYA, PK ^{[1
]}

PAMULAPATI, J ^{[1
]}

MOUROU, G ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 15期

关键词：

D O I：

10.1063/1.103347

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Femtosecond time-resolved reflectivity and photoconductive switching measurements have been made of In0.52Al0.48As grown by molecular beam epitaxy on (100) InP substrates at growth temperatures ranging from 150 to 480°C. A response/switching time of ∼400 fs is measured in the sample grown at 150°C. Temperature-dependent measurements shed light on the nature of the material producing the ultrafast response.

引用

页码：1543 / 1545

页数：3

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