SUBPICOSECOND CARRIER TRAPPING IN HIGH-DEFECT-DENSITY AMORPHOUS SI AND GAAS

被引：54

作者：

KUHL, J

GOBEL, EO

PFEIFFER, T

JONIETZ, A

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1984年 / 34卷 / 02期

关键词：

D O I：

10.1007/BF00614761

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：105 / 110

页数：6

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