PICOSECOND RELAXATION OF OPTICALLY INDUCED ABSORPTION IN AMORPHOUS-SEMICONDUCTORS

被引：67

作者：

ACKLEY, DE

TAUC, J

PAUL, W

机构：

[1] BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912

[2] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 43卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.43.715

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Picosecond relaxation of optically induced absorption in a-Si, a-Si:H, and As2S3-xSex (0.25<~x<~0.75) was studied with a passively mode-locked cw dye laser. In silicon, the results can be described in terms of trapping by defects. The fast recovery of absorption in chalcogenides indicates that recombination of highly localized excitons is the dominant mechanism in the decay of carriers excited at the Urbach edge. © 1979 The American Physical Society.

引用

页码：715 / 718

页数：4

共 11 条

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