CARRIER LIFETIME VERSUS ION-IMPLANTATION DOSE IN SILICON ON SAPPHIRE

被引：168

作者：

DOANY, FE

GRISCHKOWSKY, D

CHI, CC

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 08期

关键词：

D O I：

10.1063/1.98173

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：460 / 462

页数：3

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