OPTICAL HEATING OF ELECTRON-HOLE PLASMA IN SILICON BY PICOSECOND PULSES

被引：38

作者：

LOMPRE, LA ^{[1
]}

LIU, JM ^{[1
]}

KURZ, H ^{[1
]}

BLOEMBERGEN, N ^{[1
]}

机构：

[1] HARVARD UNIV,GORDON MCKAY LAB,DIV APPL SCI,CAMBRIDGE,MA 02138

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 01期

关键词：

D O I：

10.1063/1.94543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3 / 5

页数：3

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[J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 624 - 626
[2] PHASE-TRANSFORMATION ON AND CHARGED-PARTICLE EMISSION FROM A SILICON CRYSTAL-SURFACE, INDUCED BY PICOSECOND LASER-PULSES
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[J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 755 - 757
[3] PICOSECOND TIME-RESOLVED PLASMA AND TEMPERATURE-INDUCED CHANGES OF REFLECTIVITY AND TRANSMISSION IN SILICON
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[J]. APPLIED PHYSICS LETTERS, 1982, 41 (07) : 643 - 646
[4] TIME-RESOLVED TEMPERATURE-MEASUREMENT OF PICOSECOND LASER IRRADIATED SILICON
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[J]. APPLIED PHYSICS LETTERS, 1983, 43 (02) : 168 - 170
[5] DETERMINATION OF THE INTERBAND AND THE FREE CARRIER ABSORPTION CONSTANTS IN SILICON AT HIGH-LEVEL PHOTOINJECTION
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[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (03) : 425 - 436
[6] VANDRIEL H, UNPUB
[7] OBSERVATION OF AN ELECTRONIC PLASMA IN PICOSECOND LASER ANNEALING OF SILICON
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FABRICIUS, N
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (10) : 991 - 993
[8] SPACE-TIME RESOLVED REFLECTIVITY MEASUREMENTS OF PICOSECOND LASER-PULSE INDUCED PHASE-TRANSITIONS IN (111) SILICON SURFACE-LAYERS
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BLOEMBERGEN, N
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 27 (03): : 153 - 160