PICOSECOND TIME-RESOLVED PLASMA AND TEMPERATURE-INDUCED CHANGES OF REFLECTIVITY AND TRANSMISSION IN SILICON

[1] DYNAMICS OF Q-SWITCHED LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 777 - 779

[2] Bloembergen N., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P3

[3] Bloembergen N., 1979, LASER SOLID INTERACT, P1, DOI DOI 10.1063/1.31659

[4] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[5] HEAVENS OS, 1965, OPTICAL PROPERTIES T, P46

[6] TIME-RESOLVED OPTICAL-TRANSMISSION OF PULSED LASER-IRRADIATED SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (07) : 499 - 501

[7] CALCULATION OF CARRIER AND LATTICE TEMPERATURES INDUCED IN SI BY PICOSECOND LASER-PULSES [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 624 - 626

[8] PHASE-TRANSFORMATION ON AND CHARGED-PARTICLE EMISSION FROM A SILICON CRYSTAL-SURFACE, INDUCED BY PICOSECOND LASER-PULSES [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 755 - 757

[9] SIMPLE TECHNIQUE FOR MEASUREMENTS OF PULSED GAUSSIAN-BEAM SPOT SIZES [J]. OPTICS LETTERS, 1982, 7 (05) : 196 - 198

[10] TIME-RESOLVED OPTICAL-TRANSMISSION AND REFLECTIVITY OF PULSED-RUBY-LASER IRRADIATED CRYSTALLINE SILICON [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (04) : 267 - 271

[1] DYNAMICS OF Q-SWITCHED LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 777 - 779

[2] Bloembergen N., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P3

[3] Bloembergen N., 1979, LASER SOLID INTERACT, P1, DOI DOI 10.1063/1.31659

[4] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[5] HEAVENS OS, 1965, OPTICAL PROPERTIES T, P46

[6] TIME-RESOLVED OPTICAL-TRANSMISSION OF PULSED LASER-IRRADIATED SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (07) : 499 - 501

[7] CALCULATION OF CARRIER AND LATTICE TEMPERATURES INDUCED IN SI BY PICOSECOND LASER-PULSES [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 624 - 626

[8] PHASE-TRANSFORMATION ON AND CHARGED-PARTICLE EMISSION FROM A SILICON CRYSTAL-SURFACE, INDUCED BY PICOSECOND LASER-PULSES [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 755 - 757

[9] SIMPLE TECHNIQUE FOR MEASUREMENTS OF PULSED GAUSSIAN-BEAM SPOT SIZES [J]. OPTICS LETTERS, 1982, 7 (05) : 196 - 198

[10] TIME-RESOLVED OPTICAL-TRANSMISSION AND REFLECTIVITY OF PULSED-RUBY-LASER IRRADIATED CRYSTALLINE SILICON [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (04) : 267 - 271