学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
TIME-RESOLVED OPTICAL-TRANSMISSION OF PULSED LASER-IRRADIATED SILICON
被引:31
作者
:
LEE, MC
论文数:
0
引用数:
0
h-index:
0
LEE, MC
LO, HW
论文数:
0
引用数:
0
h-index:
0
LO, HW
AYDINLI, A
论文数:
0
引用数:
0
h-index:
0
AYDINLI, A
COMPAAN, A
论文数:
0
引用数:
0
h-index:
0
COMPAAN, A
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1981年
/ 38卷
/ 07期
关键词
:
D O I
:
10.1063/1.92422
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:499 / 501
页数:3
相关论文
共 24 条
[1]
DYNAMICS OF Q-SWITCHED LASER ANNEALING
AUSTON, DH
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
AUSTON, DH
GOLOVCHENKO, JA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
GOLOVCHENKO, JA
SIMONS, AL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
SIMONS, AL
SURKO, CM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
SURKO, CM
VENKATESAN, TNC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
VENKATESAN, TNC
[J].
APPLIED PHYSICS LETTERS,
1979,
34
(11)
: 777
-
779
[2]
TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING
AUSTON, DH
论文数:
0
引用数:
0
h-index:
0
AUSTON, DH
SURKO, CM
论文数:
0
引用数:
0
h-index:
0
SURKO, CM
VENKATESAN, TNC
论文数:
0
引用数:
0
h-index:
0
VENKATESAN, TNC
SLUSHER, RE
论文数:
0
引用数:
0
h-index:
0
SLUSHER, RE
GOLOVCHENKO, JA
论文数:
0
引用数:
0
h-index:
0
GOLOVCHENKO, JA
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(05)
: 437
-
440
[3]
ARSENIC DIFFUSION IN SILICON MELTED BY HIGH-POWER NANOSECOND LASER PULSING
BAERI, P
论文数:
0
引用数:
0
h-index:
0
BAERI, P
CAMPISANO, SU
论文数:
0
引用数:
0
h-index:
0
CAMPISANO, SU
FOTI, G
论文数:
0
引用数:
0
h-index:
0
FOTI, G
RIMINI, E
论文数:
0
引用数:
0
h-index:
0
RIMINI, E
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(02)
: 137
-
140
[4]
MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS
BAERI, P
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
BAERI, P
CAMPISANO, SU
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
CAMPISANO, SU
FOTI, G
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
FOTI, G
RIMINI, E
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
RIMINI, E
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(02)
: 788
-
797
[5]
SEGREGATION EFFECTS IN CU-IMPLANTED SI AFTER LASER-PULSE MELTING
BAERI, P
论文数:
0
引用数:
0
h-index:
0
BAERI, P
CAMPISANO, SU
论文数:
0
引用数:
0
h-index:
0
CAMPISANO, SU
FOTI, G
论文数:
0
引用数:
0
h-index:
0
FOTI, G
RIMINI, E
论文数:
0
引用数:
0
h-index:
0
RIMINI, E
[J].
PHYSICAL REVIEW LETTERS,
1978,
41
(18)
: 1246
-
1249
[6]
COMPAAN A, 1980, 11TH P INT C DEF RAD
[7]
LASER-INDUCED INFRARED ABSORPTION IN SILICON
GAUSTER, WB
论文数:
0
引用数:
0
h-index:
0
GAUSTER, WB
BUSHNELL, JC
论文数:
0
引用数:
0
h-index:
0
BUSHNELL, JC
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(09)
: 3850
-
&
[8]
LIN YS, 1979, APPL PHYS LETT, V34, P363
[9]
RAMAN MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED LASER-HEATING OF SILICON
LO, HW
论文数:
0
引用数:
0
h-index:
0
LO, HW
COMPAAN, A
论文数:
0
引用数:
0
h-index:
0
COMPAAN, A
[J].
PHYSICAL REVIEW LETTERS,
1980,
44
(24)
: 1604
-
1607
[10]
PULSED RAMAN MEASUREMENT OF THE ONSET OF RECRYSTALLIZATION IN LASER ANNEALING
LO, HW
论文数:
0
引用数:
0
h-index:
0
LO, HW
COMPAAN, A
论文数:
0
引用数:
0
h-index:
0
COMPAAN, A
[J].
APPLIED PHYSICS LETTERS,
1981,
38
(03)
: 179
-
181
←
1
2
3
→
共 24 条
[1]
DYNAMICS OF Q-SWITCHED LASER ANNEALING
AUSTON, DH
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
AUSTON, DH
GOLOVCHENKO, JA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
GOLOVCHENKO, JA
SIMONS, AL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
SIMONS, AL
SURKO, CM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
SURKO, CM
VENKATESAN, TNC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
VENKATESAN, TNC
[J].
APPLIED PHYSICS LETTERS,
1979,
34
(11)
: 777
-
779
[2]
TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING
AUSTON, DH
论文数:
0
引用数:
0
h-index:
0
AUSTON, DH
SURKO, CM
论文数:
0
引用数:
0
h-index:
0
SURKO, CM
VENKATESAN, TNC
论文数:
0
引用数:
0
h-index:
0
VENKATESAN, TNC
SLUSHER, RE
论文数:
0
引用数:
0
h-index:
0
SLUSHER, RE
GOLOVCHENKO, JA
论文数:
0
引用数:
0
h-index:
0
GOLOVCHENKO, JA
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(05)
: 437
-
440
[3]
ARSENIC DIFFUSION IN SILICON MELTED BY HIGH-POWER NANOSECOND LASER PULSING
BAERI, P
论文数:
0
引用数:
0
h-index:
0
BAERI, P
CAMPISANO, SU
论文数:
0
引用数:
0
h-index:
0
CAMPISANO, SU
FOTI, G
论文数:
0
引用数:
0
h-index:
0
FOTI, G
RIMINI, E
论文数:
0
引用数:
0
h-index:
0
RIMINI, E
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(02)
: 137
-
140
[4]
MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS
BAERI, P
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
BAERI, P
CAMPISANO, SU
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
CAMPISANO, SU
FOTI, G
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
FOTI, G
RIMINI, E
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
RIMINI, E
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(02)
: 788
-
797
[5]
SEGREGATION EFFECTS IN CU-IMPLANTED SI AFTER LASER-PULSE MELTING
BAERI, P
论文数:
0
引用数:
0
h-index:
0
BAERI, P
CAMPISANO, SU
论文数:
0
引用数:
0
h-index:
0
CAMPISANO, SU
FOTI, G
论文数:
0
引用数:
0
h-index:
0
FOTI, G
RIMINI, E
论文数:
0
引用数:
0
h-index:
0
RIMINI, E
[J].
PHYSICAL REVIEW LETTERS,
1978,
41
(18)
: 1246
-
1249
[6]
COMPAAN A, 1980, 11TH P INT C DEF RAD
[7]
LASER-INDUCED INFRARED ABSORPTION IN SILICON
GAUSTER, WB
论文数:
0
引用数:
0
h-index:
0
GAUSTER, WB
BUSHNELL, JC
论文数:
0
引用数:
0
h-index:
0
BUSHNELL, JC
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(09)
: 3850
-
&
[8]
LIN YS, 1979, APPL PHYS LETT, V34, P363
[9]
RAMAN MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED LASER-HEATING OF SILICON
LO, HW
论文数:
0
引用数:
0
h-index:
0
LO, HW
COMPAAN, A
论文数:
0
引用数:
0
h-index:
0
COMPAAN, A
[J].
PHYSICAL REVIEW LETTERS,
1980,
44
(24)
: 1604
-
1607
[10]
PULSED RAMAN MEASUREMENT OF THE ONSET OF RECRYSTALLIZATION IN LASER ANNEALING
LO, HW
论文数:
0
引用数:
0
h-index:
0
LO, HW
COMPAAN, A
论文数:
0
引用数:
0
h-index:
0
COMPAAN, A
[J].
APPLIED PHYSICS LETTERS,
1981,
38
(03)
: 179
-
181
←
1
2
3
→