PULSED RAMAN MEASUREMENT OF THE ONSET OF RECRYSTALLIZATION IN LASER ANNEALING

被引：34

作者：

LO, HW

COMPAAN, A

机构：

来源：

关键词：

D O I：

10.1063/1.92300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：179 / 181

页数：3

共 15 条

[1] DYNAMICS OF Q-SWITCHED LASER ANNEALING
AUSTON, DH
GOLOVCHENKO, JA
SIMONS, AL
SURKO, CM
VENKATESAN, TNC
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 777 - 779
[2] PICOSECOND SPECTROSCOPY OF SEMICONDUCTORS
AUSTON, DH
MCAFEE, S
SHANK, CV
IPPEN, EP
TESCHKE, O
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 147 - 150
[3] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS
BAERI, P
CAMPISANO, SU
FOTI, G
RIMINI, E
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797
[4] PHYSICS OF ULTRAFAST PHENOMENA IN SOLID-STATE PLASMAS
ELCI, A
SMIRL, AL
LEUNG, CY
SCULLY, MO
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 151 - 158
[5] JOHNSON WS, 1969, PROJECTED RANGE STAT
[6] SOME FEATURES OF LASER ANNEALING OF IMPLANTED SILICON LAYERS
KHAIBULLIN, IB
SHTYRKOV, EI
ZARIPOV, MM
BAYAZITOV, RM
GALJAUTDINOV, MF
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (3-4): : 225 - 233
[7] LIN YS, 1979, APPL PHYS LETT, V34, P363
[8] RAMAN MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED LASER-HEATING OF SILICON
LO, HW
COMPAAN, A
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (24) : 1604 - 1607
[9] MURAKAMI K, 1979, PHYS LETT A, V20, P32
[10] REASONS TO BELIEVE PULSED LASER ANNEALING OF SI DOES NOT INVOLVE SIMPLE THERMAL MELTING
VANVECHTEN, JA
TSU, R
SARIS, FW
HOONHOUT, D
[J]. PHYSICS LETTERS A, 1979, 74 (06) : 417 - 421