TIME-RESOLVED TEMPERATURE-MEASUREMENT OF PICOSECOND LASER IRRADIATED SILICON

被引：51

作者：

LOMPRE, LA ^{[1
]}

LIU, JM ^{[1
]}

KURZ, H ^{[1
]}

BLOEMBERGEN, N ^{[1
]}

机构：

[1] HARVARD UNIV,GORDON MCKAY LAB,DEPT APPL SCI,CAMBRIDGE,MA 02138

来源：

关键词：

D O I：

10.1063/1.94268

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：168 / 170

页数：3

共 13 条

[1] APPLETON BR, 1982, LASER ELECTRON BEAM
[2] CAMPAAN A, 1983, LASER SOLID STATE IN
[3] Jacobsson R., 1966, PROG OPT, V5
[4] JELLISON GE, 1982, APPL PHYS LETT, V41, P180, DOI 10.1063/1.93454
[5] JELLISON GE, COMMUNICATION
[6] Liu J. M., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P29
[7] PICOSECOND TIME-RESOLVED PLASMA AND TEMPERATURE-INDUCED CHANGES OF REFLECTIVITY AND TRANSMISSION IN SILICON
LIU, JM
KURZ, H
BLOEMBERGEN, N
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (07) : 643 - 646
[8] LIU JM, 1982, THESIS HARVARD U
[9] SMITH RA, 1978, SEMICONDUCTORS+, P321
[10] MEASUREMENT OF LATTICE TEMPERATURE OF SILICON DURING PULSED LASER ANNEALING
STRITZKER, B
POSPIESZCZYK, A
TAGLE, JA
[J]. PHYSICAL REVIEW LETTERS, 1981, 47 (05) : 356 - 358