MEASUREMENT OF LATTICE TEMPERATURE OF SILICON DURING PULSED LASER ANNEALING

被引：141

作者：

STRITZKER, B ^{[1
]}

POSPIESZCZYK, A ^{[1
]}

TAGLE, JA ^{[1
]}

机构：

[1] ASSOC EURATOM, KERNFORSCH ANLAGE JULICH, INST PLASMAPHYS, D-5170 JULICH, FED REP GER

来源：

PHYSICAL REVIEW LETTERS | 1981年 / 47卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.47.356

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：356 / 358

页数：3

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