SI AND GE (111) SURFACE-STRUCTURES AFTER PULSED LASER ANNEALING

[1] ATOMICALLY CLEAN SURFACES BY PULSED LASER BOMBARDMENT [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4776 - &

[2] EASTMAN DE, 1980, J VAC SCI TECHNOL, V17, P492, DOI 10.1116/1.570492

[3] STRUCTURE AND TRANSFORMATION CHARACTERISTICS OF IMPURITY STABILIZED PHASES ON SI(111) SURFACE [J]. SURFACE SCIENCE, 1971, 24 (01) : 173 - +

[4] ENERGY-LEVEL SPECTRA OF ELECTRONS AT (111), (110), AND (100) SURFACES OF SILICON AND GERMANIUM BY ION-NEUTRALIZATION SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1973, 8 (04): : 1580 - 1591

[5] STRUCTURE OF RECONSTRUCTED SI(001)2 BY 1 AND GE(001)2 BY 1 SURFACES [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (12): : L455 - L461

[6] LOW-ENERGY ELECTRON DIFFRACTION STUDY OF SILICON SURFACE STRUCTURES [J]. JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) : 729 - &

[7] LOW-ENERGY ELECTRON-DIFFRACTION STUDY OF SURFACE REACTIONS OF GERMANIUM WITH OXYGEN AND WITH IODINE .2. [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) : 1411 - &

[8] PHYSICS OF RECONSTRUCTED SILICON SURFACES [J]. SURFACE SCIENCE, 1979, 86 (JUL) : 672 - 699

[9] CORRELATION OF GEOMETRICAL STRUCTURE AND ELECTRONIC PROPERTIES AT CLEAN SEMICONDUCTOR SURFACES [J]. SURFACE SCIENCE, 1977, 63 (01) : 79 - 95

[10] FIRST-ORDER APPROXIMATION TO QUANTITATIVE AUGER ANALYSIS IN RANGE 100 TO 1000EV USING CMA ANALYZER [J]. SURFACE SCIENCE, 1975, 49 (01) : 318 - 324

[1] ATOMICALLY CLEAN SURFACES BY PULSED LASER BOMBARDMENT [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4776 - &

[2] EASTMAN DE, 1980, J VAC SCI TECHNOL, V17, P492, DOI 10.1116/1.570492

[3] STRUCTURE AND TRANSFORMATION CHARACTERISTICS OF IMPURITY STABILIZED PHASES ON SI(111) SURFACE [J]. SURFACE SCIENCE, 1971, 24 (01) : 173 - +

[4] ENERGY-LEVEL SPECTRA OF ELECTRONS AT (111), (110), AND (100) SURFACES OF SILICON AND GERMANIUM BY ION-NEUTRALIZATION SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1973, 8 (04): : 1580 - 1591

[5] STRUCTURE OF RECONSTRUCTED SI(001)2 BY 1 AND GE(001)2 BY 1 SURFACES [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (12): : L455 - L461

[6] LOW-ENERGY ELECTRON DIFFRACTION STUDY OF SILICON SURFACE STRUCTURES [J]. JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) : 729 - &

[7] LOW-ENERGY ELECTRON-DIFFRACTION STUDY OF SURFACE REACTIONS OF GERMANIUM WITH OXYGEN AND WITH IODINE .2. [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) : 1411 - &

[8] PHYSICS OF RECONSTRUCTED SILICON SURFACES [J]. SURFACE SCIENCE, 1979, 86 (JUL) : 672 - 699

[9] CORRELATION OF GEOMETRICAL STRUCTURE AND ELECTRONIC PROPERTIES AT CLEAN SEMICONDUCTOR SURFACES [J]. SURFACE SCIENCE, 1977, 63 (01) : 79 - 95

[10] FIRST-ORDER APPROXIMATION TO QUANTITATIVE AUGER ANALYSIS IN RANGE 100 TO 1000EV USING CMA ANALYZER [J]. SURFACE SCIENCE, 1975, 49 (01) : 318 - 324